티스토리 뷰

고전류용 IGBT(Insulated Gate Bipolar Transistor)

 

Model Spec. Remarks Image
IXXX300N60B3 I_C: 550A
V_C: 600V
P_max : 2300W
TO247-3
IXYS
IXYX140N120A4 I_C: 480A
V_C: 1200V
P_max : 1500W
TO247-3
IXYS
IXGX400N30A3 I_C: 400A
V_C: 300V
P_max : 1000W
TO247-3
IXYS  
APT200GN60B2G I_C: 283A
V_C: 600V
P_max : 682W
TO247-3
Microchip Technology
AFGY160T65SPD-B4 I_C: 240A
V_C: 650V
P_max : 882W
TO247-3
ON Semiconductor  

AFGY160T65SPD-B4-D.PDF
2.52MB
Littelfuse_Discrete_IGBTs_PT_IXG_400N30A3_Datasheet.PDF.PDF
0.29MB
IXYX140N120A4_DS.pdf
0.59MB
Littelfuse_Discrete_IGBTs_XPT_IXX_300N60B3_Datasheet.PDF.PDF
0.22MB

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